Browse Prior Art Database

Photoresist Stripping Technique

IP.com Disclosure Number: IPCOM000076470D
Original Publication Date: 1972-Mar-01
Included in the Prior Art Database: 2005-Feb-24
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Viswanathan, NS: AUTHOR

Abstract

Photoresist layers (after exposure development steps) are usually removed from wafers by the use of solvents, oxidizing agents or in an oxygen plasma.

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Photoresist Stripping Technique

Photoresist layers (after exposure development steps) are usually removed from wafers by the use of solvents, oxidizing agents or in an oxygen plasma.

The resist films to be stripped are touched with a small platinum probe the wafer being kept at temperatures around 150-200 Degrees C. This technique uses the oxidation properties of platinum catalysts to remove the photoresist films without contaminating the semiconductor wafer.

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