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Photoresist Stripping Solution and Process

IP.com Disclosure Number: IPCOM000076471D
Original Publication Date: 1972-Mar-01
Included in the Prior Art Database: 2005-Feb-24
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Kaplan, LH: AUTHOR [+3]

Abstract

A photoresist stripping process for positive and negative resists employs three solutions as follows: A) KMn O(4), saturated in water. B) Na(2) S(2)O(5) or K(2)S(2)O(5) , 200 grams/liter in water. C) A mixture of concentrated H(2)SO(4) and concentrated HHO(3), 67:33 by volume. The resist film of up to 1 micron in thickness is removed by the following process steps: (a) Immerse for 1 minute in solution A and quench in water, (b) dip for 10 seconds in solution B and quench in water, (c) immerse for 1 minute in solution C and quench in deionized water, (d) dip for 5 seconds in isopropanol, (e) dip for 10 seconds in n-butyl acetate, (f) dip in isopropanol, (g) dip in deionized water, (h) repeat steps (a) through (e) two additional times, and (i) blow dry.

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Photoresist Stripping Solution and Process

A photoresist stripping process for positive and negative resists employs three solutions as follows:
A) KMn O(4), saturated in water.
B) Na(2) S(2)O(5) or K(2)S(2)O(5) , 200 grams/liter in

water.
C) A mixture of concentrated H(2)SO(4) and concentrated

HHO(3), 67:33 by volume. The resist film of up to 1 micron in thickness is removed by the following process steps:
(a) Immerse for 1 minute in solution A and quench in

water,
(b) dip for 10 seconds in solution B and quench in water,
(c) immerse for 1 minute in solution C and quench in

deionized water,
(d) dip for 5 seconds in isopropanol,
(e) dip for 10 seconds in n-butyl acetate,
(f) dip in isopropanol,
(g) dip in deionized water,
(h) repeat steps (a) through (e) two additional times, and
(i) blow dry.

The process is carried out with all solutions at room temperature.

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