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Fragility Test for Sputtered Quartz Film

IP.com Disclosure Number: IPCOM000076512D
Original Publication Date: 1972-Mar-01
Included in the Prior Art Database: 2005-Feb-24
Document File: 2 page(s) / 16K

Publishing Venue

IBM

Related People

Gangatirkar, PD: AUTHOR

Abstract

The relative strength of various thicknesses of sputtered quartz films deposited on the surface of semiconductor bodies can be determined by vibrating the bodies under controlled dynamic conditions.

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Fragility Test for Sputtered Quartz Film

The relative strength of various thicknesses of sputtered quartz films deposited on the surface of semiconductor bodies can be determined by vibrating the bodies under controlled dynamic conditions.

The test shows that for a given thickness of silicon dioxide film, a fragility number F, defined as:

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where x is the percentage of chips with cracked quartz at n cycles under constant frequency and double amplitude, and m is the number of tests performed.

It was found that the higher the fragility number F, the lower the relative strength of the sputtered-quartz film. One test, using a frequency of 7.5 cycles per second and a double amplitude equal to 0.5 inches, determined that; for 3 micron thick silicon dioxide films, the fragility number was 0.1125 and for 5 micron thick silicon dioxide films, the fragility number was 0.0038. This data shows that 5 micron thick quartz films are approximately two orders of magnitude more crack resistant than 3 micron films.

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