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Browse Prior Art Database

FET and Bistable Resistor Static Shift Register

IP.com Disclosure Number: IPCOM000076519D
Original Publication Date: 1972-Mar-01
Included in the Prior Art Database: 2005-Feb-24
Document File: 2 page(s) / 33K

Publishing Venue

IBM

Related People

Krick, PJ: AUTHOR [+2]

Abstract

This static shift register has a density which approaches that of dynamic shift registers using only field-effect transistors (FET's). One bit of information storage is shown in Fig. 1. Fig. 2 shows the current/voltage plot for a bistable resistor, while Fig. 3 shows the applied pulses use for information storage and transfer.

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FET and Bistable Resistor Static Shift Register

This static shift register has a density which approaches that of dynamic shift registers using only field-effect transistors (FET's). One bit of information storage is shown in Fig. 1. Fig. 2 shows the current/voltage plot for a bistable resistor, while Fig. 3 shows the applied pulses use for information storage and transfer.

Referring to Fig. 1, each section of a bit storage position is comprised of an FET and a bistable resistance element (indicated by the legend BR). These bistable resistors have two stable resistance states (A, B) as is indicated by the plot of Fig. 2.

Two cycles of drive pulses are necessary to enter information into a bit position and then to shift it from the first section of the bit position to the second section, prior to entry of new information into the bit position. Referring to Fig. 3, drive pulses Phi(1R) and Phi(1S) are applied at the same time to initially put BR1 into a low resistance state by applying a reverse bias to BR1. This places BR1 into the third quadrant of its current/voltage characteristic since the voltage -V(t) is exceeded. Hence, BR1 is in the low-resistance state and awaiting application of information to the first section of the bit-storage position.

When information is applied to the gate of FET1 at the time phi1 is positive, FET1 will conduct current which exceeds threshold current I(T) of BR1. BR1 then switches to its high-resistance state B.

On the second cycle...