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Flatband Voltage Measurement of Oxide Semi Conductor Structure

IP.com Disclosure Number: IPCOM000076549D
Original Publication Date: 1972-Mar-01
Included in the Prior Art Database: 2005-Feb-24
Document File: 2 page(s) / 27K

Publishing Venue

IBM

Related People

Quinn, RM: AUTHOR

Abstract

This method allows direct measurement of flat-band voltage of oxide semiconductor structures, without introducing contamination caused by metallurgical contact structure.

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Flatband Voltage Measurement of Oxide Semi Conductor Structure

This method allows direct measurement of flat-band voltage of oxide semiconductor structures, without introducing contamination caused by metallurgical contact structure.

Semiconductor wafer 1 with oxide layer 2 is mounted on a chuck, not shown. An o-ring 3 is placed around the circumference of the wafer. Metal electrode plate 4 is placed on o-ring 3 and deionized water is passed through inlet tube 5, through the space between the wafer and electrode 4, and out exit tube 6. Under these conditions, a low-frequency voltage source V1 is applied to wafer 1 and the voltage V2 on electrode 4 is monitored. The deionized water has a relatively low resistivity in comparison with the oxide resistivity, and the voltage drop between the wafer and electrode is almost entirely due to the oxide-semiconductor structure. Light energy 7 is then passed through transparent windows in electrode 4, allowing the generation of optically excited current required to determine flat-band voltage, as taught in IBM Technical Disclosure Bulletin, Vol. 14, No. 6, Nov. 1971, page 1732. The flowing deionized water insures the cleanliness of the wafer surface. Modification of the metal electrode to a grid structure on a glass substrate, or use of a glass-base plate, and applying optical excitation from the bottom of the wafer will allow mapping flat-band voltage using a scanning technique over the entire wafer.

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