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Browse Prior Art Database

Substrate Holder

IP.com Disclosure Number: IPCOM000076594D
Original Publication Date: 1972-Mar-01
Included in the Prior Art Database: 2005-Feb-24
Document File: 2 page(s) / 57K

Publishing Venue

IBM

Related People

Chiou, C: AUTHOR [+3]

Abstract

Substrate temperature and film thickness are known to be critical to the physical properties of metal and dielectric films. A new substrate temperature-control fixture, with stepping shutter mechanism, is used to provide a capability of controlling samples at five varying substrate temperatures and/or four different thicknesses in one deposition for film fabrications, by using thermal evaporation and sputtering. The use of this arrangement thus significantly improves flexibility, productivity and control ability in film fabrications.

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Substrate Holder

Substrate temperature and film thickness are known to be critical to the physical properties of metal and dielectric films. A new substrate temperature- control fixture, with stepping shutter mechanism, is used to provide a capability of controlling samples at five varying substrate temperatures and/or four different thicknesses in one deposition for film fabrications, by using thermal evaporation and sputtering. The use of this arrangement thus significantly improves flexibility, productivity and control ability in film fabrications.

This substrate temperature-control fixture, as shown in the drawing, mainly consists of a temperature platen, with a cartridge heater and a coolant path, a conventional heating and cooling system and substrate holders. The temperature platen provides various ranges of temperature gradient, by properly mixing the heating from a cartridge heater on one side and the cooling from a recirculating coolant on the other side. While the heating of the cartridge heater is controlled by an external VARIAC*, the cooling of the recirculating coolant is adjusted through an external constant-temperature cold-water bath. Typical substrate temperatures of 42, 52, 61 and 70 and 77 degrees C have been conveniently and consistently obtained. Alternatively, through the use of the conventional heating and cooling system, the temperature platen maintains given constant substrate temperature when needed during deposition or quenching the s...