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Growing an Epitaxial Layer by Controlling Autodoping

IP.com Disclosure Number: IPCOM000076636D
Original Publication Date: 1972-Apr-01
Included in the Prior Art Database: 2005-Feb-24
Document File: 2 page(s) / 32K

Publishing Venue

IBM

Related People

Ing, DW: AUTHOR [+2]

Abstract

Autodoping from a diffused region 11 in a substrate 10, during growth of an epitaxial layer, is prevented by first growing a chin epitaxial layer 14 over the entire surface 12 of the substrate 10 (A). Through following steps, the layer 14 is removed except for the portion over the diffused region 11 (B).

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Growing an Epitaxial Layer by Controlling Autodoping

Autodoping from a diffused region 11 in a substrate 10, during growth of an epitaxial layer, is prevented by first growing a chin epitaxial layer 14 over the entire surface 12 of the substrate 10 (A). Through following steps, the layer 14 is removed except for the portion over the diffused region 11 (B).

A second epitaxial layer 17 is then grown over the surface 12 of the substrate 10 and the remaining Portion of the first epitaxial layer 14, as shown in C. The epitaxial layer 14 caps the diffusion region 11 to prevent autodoping into the second epitaxial layer 17, during growth thereof over the surface 12 of the substrate 10 not having the diffused region 11 therein.

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