Browse Prior Art Database

Planar Diffused Laser Diode

IP.com Disclosure Number: IPCOM000076640D
Original Publication Date: 1972-Apr-01
Included in the Prior Art Database: 2005-Feb-24
Document File: 2 page(s) / 27K

Publishing Venue

IBM

Related People

Sprokel, GJ: AUTHOR

Abstract

In this method the impurity is introduced into a GaAs wafer through a thin silicon layer positioned between the masking layer and wafer.

This text was extracted from a PDF file.
At least one non-text object (such as an image or picture) has been suppressed.
This is the abbreviated version, containing approximately 100% of the total text.

Page 1 of 2

Planar Diffused Laser Diode

In this method the impurity is introduced into a GaAs wafer through a thin silicon layer positioned between the masking layer and wafer.

Side diffusion along the interface between the wafer and mask is a well- known problem in the fabrication of planar diffused laser diodes.

In this method, a thin layer 10 of amphorous silicon is deposited by sputtering on the top surface of a GaAs wafer 12, as shown in A. Subsequently, a masking layer 14, for example Al(2)O(3), is deposited over layer 10 and diffusion windows 16 formed therein through layer 14. Zn is then diffused through window 16 resulting in diffused region 18 shown in B. Zn is diffused through the silicon layer 10 and due to the adhesion of the layer 10 to the GaAs wafer 12, no lateral diffusion along the interface can occur. Layer 10 is of the order of 1000 angstroms for best results.

1

Page 2 of 2

2

[This page contains 1 picture or other non-text object]