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InSbAs Infrared Sensor

IP.com Disclosure Number: IPCOM000076677D
Original Publication Date: 1972-Apr-01
Included in the Prior Art Database: 2005-Feb-24
Document File: 2 page(s) / 25K

Publishing Venue

IBM

Related People

Shang, DT: AUTHOR

Abstract

Photosensors 10, 20 senses in the infrared (IR) wavelength range and particularly from one to twelve microns. Sensor 10 is a diode, i.e. photovoltaic type. It includes a PN diode region 11 on top of a substrate 12 of N-type material such as GaAs. Region 11 is first formed on substrate 12 by a liquid phase epitaxial growth process of N-type material of InSbAs. A typical composition for forming the N-type material is as follows: In 20.4215 grams InSb (Te doped) 2.4023 grams As 1.6267 grams Te (used as N-dopant) 0.0155 gram.

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InSbAs Infrared Sensor

Photosensors 10, 20 senses in the infrared (IR) wavelength range and particularly from one to twelve microns. Sensor 10 is a diode, i.e. photovoltaic type. It includes a PN diode region 11 on top of a substrate 12 of N-type material such as GaAs. Region 11 is first formed on substrate 12 by a liquid phase epitaxial growth process of N-type material of InSbAs. A typical composition for forming the N-type material is as follows: In 20.4215 grams

InSb (Te doped) 2.4023 grams

As 1.6267 grams

Te (used as N-dopant) 0.0155 gram.

The PN junction 11a is formed by counterdoping or diffusing a P-type material in the N region 11. For the given composition, a P-type dopant of Zn of approximately 0.0461 gram was counterdoped during the liquid phase epitaxially growth process. The PN junction 11a so formed provides the P and N subregions 11b, 11c of diode 11. Appropriate electrodes 13 and 14 are connected across the diode 11, to detect the photosignal across the junction 11a when diode 11 is illuminated by the IR.

Sensor 20 is a bulk, i.e. photoconductive type. It includes a region 21 of InSbAs on top of a substrate 22 such as GaAs. Region 21 and substrate 22 are of the rare conductivity types, e.g. N type, or alternatively may be of the P type. Region 21 Is formed by a liquid phase epitaxial growth process on substrate 22. Appropriate electrodes 23, 24 are connected to the region 21 to detect the photocurrent in region 21 when the region is illuminated b...