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Integrated Clamp and Emitter Follower

IP.com Disclosure Number: IPCOM000076714D
Original Publication Date: 1972-Apr-01
Included in the Prior Art Database: 2005-Feb-24
Document File: 2 page(s) / 48K

Publishing Venue

IBM

Related People

Harris, DP: AUTHOR [+2]

Abstract

Improved resistance tolerance control and faster switching speeds are obtained in an integrated circuit clamp comprising integrated circuit transistors and integrally formed resistors (constituted by the base region), by omitting the epitaxial region existing between the common-collector contact and the upper resistor contact. The device is formed on a P type substrate 10, over which is formed a N+ subcollector region 12 and a N type epitaxial layer 14. The device is electrically isolated by P+ region 16. Prior to the formation of the silicon dioxide (SiO(2)) passivation layer 18, a plurality of N+ diffused regions 20, 21, and 22 constituting emitter regions are formed in the P base region 24.

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Integrated Clamp and Emitter Follower

Improved resistance tolerance control and faster switching speeds are obtained in an integrated circuit clamp comprising integrated circuit transistors and integrally formed resistors (constituted by the base region), by omitting the epitaxial region existing between the common-collector contact and the upper resistor contact. The device is formed on a P type substrate 10, over which is formed a N+ subcollector region 12 and a N type epitaxial layer 14. The device is electrically isolated by P+ region 16. Prior to the formation of the silicon dioxide (SiO(2)) passivation layer 18, a plurality of N+ diffused regions 20, 21, and 22 constituting emitter regions are formed in the P base region 24. A N+ diffused region 25 formed below a contact hole 26 eliminates the epitaxial region between the common-collector contact and the upper resistor contact. The remaining openings in the silicon dioxide passivation layer 18, designated generally at 28, provide access to the integrally formed resistor regions constituted by the P base region, and also provide contact openings for the respective N+ emitter regions 20, 21 and 22.

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