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Process for Depositing Al(2)O(3)

IP.com Disclosure Number: IPCOM000076721D
Original Publication Date: 1972-Apr-01
Included in the Prior Art Database: 2005-Feb-24
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Anderson, J: AUTHOR [+6]

Abstract

This process for depositing Al(2)O(3) on GaAs and other III-V semiconductor materials by RF sputter deposition entails controlling the sputtering parameters.

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Process for Depositing Al(2)O(3)

This process for depositing Al(2)O(3) on GaAs and other III-V semiconductor materials by RF sputter deposition entails controlling the sputtering parameters.

Deposition of Al(2)O(3) on GaAs and associated III-V semiconductor compounds by conventional techniques is generally unsatisfactory because the quality of the film is unsatisfactory and it frequently flaked off during subsequent process steps.

In this process, utilizing an RF sputtering apparatus having an Al(2)O(3) target the input power to the target is maintained at a low value, to maintain a low-deposition rate of the deposited film. Deposition at low deposition rates produces films having residual compressive stress, For example, utilizing a 7 inch diameter target the optimum input power was 200 watts. The substrate bias is also varied to obtain a good bond between film and substrate. Starting at -450 volts, the bias is decreased in 50 volt steps (1 minute per step) to -200 volts. The system is then held at -200 volts until the desired thickness is obtained.

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