Browse Prior Art Database

Fast Writing Storage Display Tube

IP.com Disclosure Number: IPCOM000076729D
Original Publication Date: 1972-Apr-01
Included in the Prior Art Database: 2005-Feb-24
Document File: 2 page(s) / 23K

Publishing Venue

IBM

Related People

Cowher, ME: AUTHOR [+3]

Abstract

A fast writing storage display tube in the prior art is shown in Fig. 1 and consists of the following layers built up sequentially, namely, a glass substrate 2, interdigitating transparent conducting lines 4, a ZnS electroluminescent phosphor 6 plus plastic binder which forms the display portion of the tube, and a double layer of polycrystalline silicon 8 and silicon dioxide 10. The last two layers (poly-Si-SiO(2)) are in essence a field-effect device, where an electron beam is used to store charge on the SiO and the conductivity of the poly-Si is thereby modulated to switch current on and off through the phosphor under it.

This text was extracted from a PDF file.
At least one non-text object (such as an image or picture) has been suppressed.
This is the abbreviated version, containing approximately 72% of the total text.

Page 1 of 2

Fast Writing Storage Display Tube

A fast writing storage display tube in the prior art is shown in Fig. 1 and consists of the following layers built up sequentially, namely, a glass substrate 2, interdigitating transparent conducting lines 4, a ZnS electroluminescent phosphor 6 plus plastic binder which forms the display portion of the tube, and a double layer of polycrystalline silicon 8 and silicon dioxide 10. The last two layers (poly- Si-SiO(2)) are in essence a field-effect device, where an electron beam is used to store charge on the SiO and the conductivity of the poly-Si is thereby modulated to switch current on and off through the phosphor under it.

However, the high temperature involved in the deposition of polycrystalline Si, means that the latter cannot be deposited directly onto the ZnS layer lest the latter be damaged. To overcome this short-coming, a 1/2 mil thick sheet of mica 12 (see Fig. 2) is located between the poly-Si and the ZnS, at the necessary temperature, on the mica sheet supported in a suitable frame. The SiO(2) may be formed by oxidation, deposition or plasma anodization. The mica-poly Si- SiO(2) structure is then further processed in one of two ways: (1) the ZnS plus binder is coated on the backside of the mica followed by formation of semitransparent conducting lines, or (2) the mica-poly Si-SiO(2) layer is bonded (mica side) to the ZnS plus binder to a glass substrate already prepared with interdigitating conducting lines. The uniq...