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Aluminum Etch Technique

IP.com Disclosure Number: IPCOM000076754D
Original Publication Date: 1972-Apr-01
Included in the Prior Art Database: 2005-Feb-24
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Kulkarni, MV: AUTHOR

Abstract

As brought out by R. E. Hines in his article, for an "Improved Technique for Etching Aluminum Interconnect Patterns on Integrated Circuits" of the Microelectronics and Reliability publication, Bergaman Press 1971, Vol. 10, Page 59, during etching of aluminum resist patterned substrates in a phosphoric etchant, gas bubbles are formed which adhere to the dissolving aluminum to interfere with efficient removal thereof.

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Aluminum Etch Technique

As brought out by R. E. Hines in his article, for an "Improved Technique for Etching Aluminum Interconnect Patterns on Integrated Circuits" of the Microelectronics and Reliability publication, Bergaman Press 1971, Vol. 10, Page 59, during etching of aluminum resist patterned substrates in a phosphoric etchant, gas bubbles are formed which adhere to the dissolving aluminum to interfere with efficient removal thereof.

It was found that the bubbles can be dislodged to facilitate efficient etching of the aluminum, by mechanical vibration of the substrate in a 16: 1: 1: 2 :: H(3)PO(4): HNO(3): AcOH: H(2)O etchant. In operation, the wafer to be etched is rigidly coupled with the shaft of a vibrator by suitable bonding, or by holding it mechanically in a suitable chuck. During etching, the wafer is vibrated at a frequency of 60 cycles per second. The amplitude of vibration was found to be a critical factor, requiring a maximum displacement of approximately 70 mils to obtain high-quality 1 mil wide aluminum stripes.

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