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Schottky Barrier Diode Clamp Fabrication

IP.com Disclosure Number: IPCOM000076757D
Original Publication Date: 1972-Apr-01
Included in the Prior Art Database: 2005-Feb-24
Document File: 2 page(s) / 47K

Publishing Venue

IBM

Related People

Scheffer, CW: AUTHOR [+2]

Abstract

Heretofore, in the fabrication of a Schottky barrier diode, such as shown in Fig. 1, photoresist problems were encountered in opening up a thick oxide as shown at 1. Conventionally, after N+ diffusion, the base contact is dip-opened for metallization, e.g. 1,000 Angstroms silicon oxide over the base region is removed when dip-opened. The dip-open process was found to severely undercut the emitter, base contact and collector contact windows.

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Schottky Barrier Diode Clamp Fabrication

Heretofore, in the fabrication of a Schottky barrier diode, such as shown in Fig. 1, photoresist problems were encountered in opening up a thick oxide as shown at 1. Conventionally, after N+ diffusion, the base contact is dip-opened for metallization, e.g. 1,000 Angstroms silicon oxide over the base region is removed when dip-opened. The dip-open process was found to severely undercut the emitter, base contact and collector contact windows.

The following process has been developed to minimize the above problem, starting at the emitter and contact resist step.

1) Open emitter, collector contact, base contact and Schottky barrier diode windows through silicon nitride and silicon oxide layers.

2) Second base re-oxidation of about 1,000 angstroms silicon oxide, as shown in Fig. 2.

3) Open emitter and collector contacts for N+ diffusion.

4) N+ diffusion.

5) Dip-open remaining 1,000 angstroms over base contacts and Schottky barrier diode windows.

6) Metallization of the necessary pattern.

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