Browse Prior Art Database

Charge Coupled Device Magnetic Field Sensor

IP.com Disclosure Number: IPCOM000076763D
Original Publication Date: 1972-Apr-01
Included in the Prior Art Database: 2005-Feb-24
Document File: 2 page(s) / 30K

Publishing Venue

IBM

Related People

Chang, W: AUTHOR [+2]

Abstract

A charge-coupled magnetic field sensor provides high sensitivity for magnetic field detection.

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Charge Coupled Device Magnetic Field Sensor

A charge-coupled magnetic field sensor provides high sensitivity for magnetic field detection.

The sensor comprises a diffusion source 6, a first channel gate 7 and a pair of spaced output gates 3 and 4 created in a semiconductor body 8. Insulation layers 15 isolate the gates from the semiconductor body 8. Bias voltage V1 is applied to channel gate 7 and bias voltages V2 are applied to each output gates 3 and 4, V1 being smaller than V2 so that deeper potential wells are induced beneath gates 3 and 4 for attracting the charge carriers. When a magnetic field B is applied perpendicular to the motion of the charge carriers I flowing from source 6, the carriers experience a force and consequently are directed to either of the potential wells associated with the output gates 3 and 4.

The output connections 9 and 10 from the Potential wells are taken directly from diffusion layers 11 and 12 underneath gates 3 and 4. Fig. 1 is a plan view of the sensor and Fig. 2 is an orthogonal cross section through lines 2-2 of Fig. 1.

The differential charge output provides a measurement of magnetic field strength, while the direction of the magnetic field determines the deflection of the charge carriers. The output may be used to control a field-effect transistor differential amplifier.

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