Browse Prior Art Database

Monolithic Sensor Array

IP.com Disclosure Number: IPCOM000076781D
Original Publication Date: 1972-Apr-01
Included in the Prior Art Database: 2005-Feb-24
Document File: 2 page(s) / 55K

Publishing Venue

IBM

Related People

Braun, RJ: AUTHOR [+2]

Abstract

Monolithic array 10 is provided with a number of diffused sensors 11, 12, 13 such as a Hall effect, photodiode, and temperature types, respectively. The array or chip 10 is also provided with diffused active and passive devices, e. g. NPN transistor regions 14, PNP transistor regions 15, and resistor regions 16. Suitable conductive pads 17 are provided on the periphery of the chip.

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Monolithic Sensor Array

Monolithic array 10 is provided with a number of diffused sensors 11, 12, 13 such as a Hall effect, photodiode, and temperature types, respectively. The array or chip 10 is also provided with diffused active and passive devices, e. g. NPN transistor regions 14, PNP transistor regions 15, and resistor regions 16. Suitable conductive pads 17 are provided on the periphery of the chip.

As such the chip is fabricated using a master-slice technique, i. e. without an interconnection metalization pattern. This allows different metalization patterns subsequently to be selected and used for the common arrangement of elements 11-16.

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