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Removal of Undesirable Metallization

IP.com Disclosure Number: IPCOM000076790D
Original Publication Date: 1972-Apr-01
Included in the Prior Art Database: 2005-Feb-24
Document File: 2 page(s) / 36K

Publishing Venue

IBM

Related People

Powers, JV: AUTHOR

Abstract

In current plating technologies, unwanted areas of metallization are removed by chemical etching. This involves costly photolithographic steps and often results in damage to the devices. To overcome this, a "back-plating" operation is used in which the sample is made the anode in the final plating bath or another suitable electrolyte.

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Removal of Undesirable Metallization

In current plating technologies, unwanted areas of metallization are removed by chemical etching. This involves costly photolithographic steps and often results in damage to the devices. To overcome this, a "back-plating" operation is used in which the sample is made the anode in the final plating bath or another suitable electrolyte.

Fig. 1 shows a structure after the final metallization procedure and before etching. In this instance, a Fe/Ni film is deposited on the substrate, followed by depositions to a greater thickness of Fe/Ni and Cu. Photoresist material is located over the Cu and Fe/Ni regions which are not to be removed. It is desired to remove the Fe/Ni in the regions numbered 1.

In Fig. 2, the photoresist layer has been removed and the sample has been made the anode in the final plating bath or another suitable electrolyte. When a small current is applied to the cell the undesired areas 1 dissolve. The effect on the areas of the device is similar to one of electromechanical polishing and these areas are not degraded. Fig. 2 represents the final device.

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