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Discretionary Interconnection Method for Integrated Circuits

IP.com Disclosure Number: IPCOM000076835D
Original Publication Date: 1972-Apr-01
Included in the Prior Art Database: 2005-Feb-24
Document File: 2 page(s) / 49K

Publishing Venue

IBM

Related People

Broom, RF: AUTHOR [+2]

Abstract

This method makes permanent electric contacts for interconnecting conductors on a monolithic semiconductor chip, so that circuits can be custom made on the finished chip.

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Discretionary Interconnection Method for Integrated Circuits

This method makes permanent electric contacts for interconnecting conductors on a monolithic semiconductor chip, so that circuits can be custom made on the finished chip.

Aluminum contacts on lightly doped silicon are rectifying. Two such contact lines are arranged at a mutual distance of 1 - 2 mum. Application of voltage between the two contacts causes one to conduct and the other to be blocked by back bias. Increasing the voltage, causes avalanche breakdown at the region of highest field strength adjacent to the cathode where it most closely approaches the anode. The breakdown current raises the local temperature of the silicon and when its density becomes sufficiently high, the silicon on the anode side of the microplasma becomes intrinsic, thus more conductive.

This concentrates the current in a small filament and further increases Joule heating, with the result that the microplasma initiated by the reverse-biased diode propagates through the silicon beyond the boundary of the depletion zone until it reaches the anode. once the plasma is established, positive metallic ions from the anode can drift by field assisted diffusion in the direction of the cathode. A metallic bridge is finally formed which interconnects the aluminum contacts. Provided a current limiting source is used for forming, no destruction of the metallic bridge occurs when it is finally established because its greatly lowered resista...