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Preparation of Semiconducting Vapor Epitaxial Gallium Aluminum Arsenide

IP.com Disclosure Number: IPCOM000076878D
Original Publication Date: 1971-Sep-01
Included in the Prior Art Database: 2005-Feb-24
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Bischoff, BK: AUTHOR [+2]

Abstract

Vapor epitaxial Ga(1-x)Al(x)As, which turns out to be semiinsulating as grown according to present processes, and hence of limited use, can now be made Vapor epitaxial Ga(1-x)Al(x)As, which turns out to be semiinsulating as grown according to present processes, and hence of limited use, can now be made semiconducting and, therefore, suitable for processing into devices such as transistors and light-emitting diodes.

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Preparation of Semiconducting Vapor Epitaxial Gallium Aluminum Arsenide

Vapor epitaxial Ga(1-x)Al(x)As, which turns out to be semiinsulating as grown according to present processes, and hence of limited use, can now be made Vapor epitaxial Ga(1-x)Al(x)As, which turns out to be semiinsulating as grown according to present processes, and hence of limited use, can now be made semiconducting and, therefore, suitable for processing into devices such as transistors and light-emitting diodes.

The material Ga(1-x)Al(x)As, as grown by liquid phase epitaxial techniques, shows great promise as a new semiconductor material for transistors and light- emitting diodes and as such is the subject of numerous recent papers and disclosures. Vapor phase epitaxial processes presently are capable of a higher degree of process control and are more readily scaled up for manufacturing processes than are liquid epitaxial techniques. Thus an effective vapor phase process for growing thin Ga(1-x)Al(x)As layers would be a boon to present semiconductor technology.

Heat treatment of semiinsulating Ga(1-x)Al(x)As in evacuated tubes at 1000 degrees C for 24 hours converts it to intermediate resistivity N-type material which is potentially useful for devices.

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