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Nonvolative Small Area Memory

IP.com Disclosure Number: IPCOM000076952D
Original Publication Date: 1972-May-01
Included in the Prior Art Database: 2005-Feb-24
Document File: 2 page(s) / 78K

Publishing Venue

IBM

Related People

Moser, A: AUTHOR

Abstract

Some Schottky diodes have bistable properties and can be switched from a low-resistance state to a high-resistance state and back. These conditions are stable even when power is off. Such a memory diode may constitute the gate-source part of a field-effect transistor. Whereas normally a negative signal is needed to switch the diode from a high resistance to a low-resistance state, and a positive signal for the opposite direction, the same polarity can be used if the sheet resistance of the channel layer is sufficiently high and if the channel layer is thin enough for the depletion zone created by the natural contact voltage to penetrate the channel.

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Nonvolative Small Area Memory

Some Schottky diodes have bistable properties and can be switched from a low-resistance state to a high-resistance state and back. These conditions are stable even when power is off. Such a memory diode may constitute the gate- source part of a field-effect transistor. Whereas normally a negative signal is needed to switch the diode from a high resistance to a low-resistance state, and a positive signal for the opposite direction, the same polarity can be used if the sheet resistance of the channel layer is sufficiently high and if the channel layer is thin enough for the depletion zone created by the natural contact voltage to penetrate the channel. This allows for formation and operation of a metal semiconductor field-effect transistor (MESFET) with a bistable gate-source diode via the drain-gate diode, by applying a negative pulse to the drain.

Drawing A shows the characteristic of the gate-source diode. Applying a negative current will switch the diode to the low-resistance state. The diode can be switched back to the high-resistance state by applying a negative voltage.

Forming bistable Schottky diodes results in a resistance-like filament between the formed contacts which is responsible for the bistable operation. This filament, it was found, is completely insulated from the surrounding semiconductor material. The feature is being used for insulating devices in a monolithic array.

The diode is incorporated into the transistor o...