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Liquid Phase Epitaxial Growth of Ga(1-x)Al(x)As on Magnesium Gallate Spinel

IP.com Disclosure Number: IPCOM000076999D
Original Publication Date: 1972-May-01
Included in the Prior Art Database: 2005-Feb-24
Document File: 2 page(s) / 30K

Publishing Venue

IBM

Related People

Nichols, K: AUTHOR [+4]

Abstract

Ga(1-x)Al(x) has been shown to be a very important material for laser and light-emitting devices. Particularly in the near infrared portion of the spectrum, i.e., 7500-9000 angstroms, it is currently vastly superior to other known materials. Hence, it is being explored as a pumping source for Nd:YAG lasers to be used in communication systems. A current problem is that even though internal quantum efficiencies of Ga(1-x)Al(x)As PN junction devices are approaching 100%, not all of the light generated in the junction is being collected outside the device, i.e., external quantum efficiencies are 2-3% for normal structures. The reason for this is that presently the substrate material commonly used for growing good quality Ga(1-x)Al(x)As is GaAs.

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Liquid Phase Epitaxial Growth of Ga(1-x)Al(x)As on Magnesium Gallate Spinel

Ga(1-x)Al(x) has been shown to be a very important material for laser and light-emitting devices. Particularly in the near infrared portion of the spectrum,
i.e., 7500-9000 angstroms, it is currently vastly superior to other known materials. Hence, it is being explored as a pumping source for Nd:YAG lasers to be used in communication systems. A current problem is that even though internal quantum efficiencies of Ga(1-x)Al(x)As PN junction devices are approaching 100%, not all of the light generated in the junction is being collected outside the device, i.e., external quantum efficiencies are 2-3% for normal structures. The reason for this is that presently the substrate material commonly used for growing good quality Ga(1-x)Al(x)As is GaAs. Unfortunately, this material absorbs light having wavelengths shorter than 9200 angstroms.

Transparent, insulating substrate with unique chemical properties appropriate for the liquid phase epitaxial (LPE) growth of Ga(1-x)Al(x)As are provided herein.

The substrates used for growth are cubic spinel solid solutions between MgO and Ga(2)O(3) having a maximum existence range MgO/Ga(2)O(3) = 0.68 to
1.05. The specific substrate composition grown for the LPE experiment described here had Ga(2)O(3)/MgO = 1, i.e., MgGa(2)O(4). It was grown by the Czochralski technique. Wafers of 0.03'' thickness were cut with a <111> orientation and subsequently lapped with 1...