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High-Efficiency Light Emitting Diode Using Double Zinc Diffusions

IP.com Disclosure Number: IPCOM000077036D
Original Publication Date: 1972-May-01
Included in the Prior Art Database: 2005-Feb-24
Document File: 2 page(s) / 21K

Publishing Venue

IBM

Related People

Kelly, CE: AUTHOR [+2]

Abstract

Solid state light-emitting diodes are realized through the formation of a PN junction using zinc diffusion into N layer 10 of GaP, GaAs(x)P(1-x) or Al(x)Ga(1-x) As grown epitaxially on a substrate 11, as shown in Fig. 1.

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High-Efficiency Light Emitting Diode Using Double Zinc Diffusions

Solid state light-emitting diodes are realized through the formation of a PN junction using zinc diffusion into N layer 10 of GaP, GaAs(x)P(1-x) or Al(x)Ga(1- x) As grown epitaxially on a substrate 11, as shown in Fig. 1.

High-emission efficiency is obtained by using low-zinc concentration for the P layer 12. To alleviate the current crowding effect associated with the low-zinc contents in 12, a second zinc diffusion at a much shallower depth 13 is employed as shown in Fig. 2. Emission efficiency is further enhanced by etching partially through the 2nd zinc diffused layer 13 in the light-emitting window, leaving light- emitting window 14 defined by metal overlayer 15.

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