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Solid State Pumping Source for Nd:YAG Lasers with Integrated Focusing Optics

IP.com Disclosure Number: IPCOM000077120D
Original Publication Date: 1972-Jun-01
Included in the Prior Art Database: 2005-Feb-24
Document File: 2 page(s) / 31K

Publishing Venue

IBM

Related People

Farmer, GI: AUTHOR [+2]

Abstract

Light-emitting diodes (LEDs) have been used to pump Nd:YAG lasers. Two improvements need to be made over present devices which have not been specifically designed for laser pump application; increased external quantum efficiency and imaging of the pump source within the central portion of the laser rod, i.e., within the laser mode volume. A semiconductor diode structure which produces both of these results is described herein.

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Solid State Pumping Source for Nd:YAG Lasers with Integrated Focusing Optics

Light-emitting diodes (LEDs) have been used to pump Nd:YAG lasers. Two improvements need to be made over present devices which have not been specifically designed for laser pump application; increased external quantum efficiency and imaging of the pump source within the central portion of the laser rod, i.e., within the laser mode volume. A semiconductor diode structure which produces both of these results is described herein.

The feature of the system is shown in Figs. 1 and 2.

GaP high-purity single crystal is cut to form rectangular parallel piped substrate 1 with typical dimensions of 0.5 x 0.25 x 1-2 cm. N-P-P GaAlAs structure 2 is grown by liquid phase epitaxy on the 0.5 x 0.25 cm face, such that the forward biased structure will emit light with a peak emission near or at 8050 angstroms. Next, the GaAlAs structure 2 is formed into a linear array using suitable photolithographic masking techniques and mesa etching techniques. Optimally, the array is divided into individual units having dimensions of 0.010'' x
0.100''. Each unit is electrically isolated and connected in such a way as to be operated in series with each other to insure a constant-current density in all the units. The GaP substrate 1 is then mechanically formed into a semicylindrical structure, such that the laser cavity well 3 and the linear diode 2 array are parallel and equidistant from the cylinder axis. The surfaces of the GaP are polished and co...