Browse Prior Art Database

Double Emitter Bit Line Schottky Memory Cell

IP.com Disclosure Number: IPCOM000077193D
Original Publication Date: 1972-Jun-01
Included in the Prior Art Database: 2005-Feb-25
Document File: 2 page(s) / 28K

Publishing Venue

IBM

Related People

Platt, S: AUTHOR

Abstract

This is a memory cell using but three signal lines to select, read and write binary information into the cell. The cell is designed to be insensitive to variations in the active devices forming the cell and to the resistance of the word line.

This text was extracted from a PDF file.
At least one non-text object (such as an image or picture) has been suppressed.
This is the abbreviated version, containing approximately 100% of the total text.

Page 1 of 2

Double Emitter Bit Line Schottky Memory Cell

This is a memory cell using but three signal lines to select, read and write binary information into the cell. The cell is designed to be insensitive to variations in the active devices forming the cell and to the resistance of the word line.

A transistor pair T1 and T2 each having a commonly connected base and collector is cross-coupled to similarly connected transistor pair T3 and T4 to form a bistable circuit. Load resistors R2 and R3 for each of the semiconductor devices are interposed between ground and the collector of the respective transistor pairs. A first bit line 10 is connected through a Schottky barrier diode D1 to the collector of the first transistor pair T1 and T2. A second bit line 12 is connected through a Schottky barrier diode D2. These diodes, together with the cross-coupled transistor pairs, make the cell relatively insensitive to full and half- selects disturb conditions.

The emitters of transistor T1 and T4 are coupled to the word line, while the emitters of transistors T2 and T3 are coupled together and through a common resistor R1 to a negative voltage -V. The resistor R1 reduces sensitivity of the cell to capacitive noise coupled into the cell from the word line, as well as determining the standby cell current. The resistor R1 also reduces sensitiveness of the cell to leakage current.

1

Page 2 of 2

2

[This page contains 2 pictures or other non-text objects]