Browse Prior Art Database

Device Configuration

IP.com Disclosure Number: IPCOM000077203D
Original Publication Date: 1972-Jun-01
Included in the Prior Art Database: 2005-Feb-25
Document File: 2 page(s) / 51K

Publishing Venue

IBM

Related People

Broers, AN: AUTHOR [+4]

Abstract

A device configuration is described wherein a foreign material is inserted in a preexisting thin-film metal stripe. Such a structure could function as a capacitor, resistor, or switchable element. Illustrative embodiments are: a Nb(2)O(5) channel formed in a Nb-Bi metal stripe and an amorphous chalcogenide material inserted in an aluminum stripe.

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Device Configuration

A device configuration is described wherein a foreign material is inserted in a preexisting thin-film metal stripe. Such a structure could function as a capacitor, resistor, or switchable element. Illustrative embodiments are: a Nb(2)O(5) channel formed in a Nb-Bi metal stripe and an amorphous chalcogenide material inserted in an aluminum stripe.

In many devices, elements such as capacitors and switching devices (e.g., bistable resistors) are made in a layered or sandwich-like structure. The insulating film in these devices must be thin to provide either the necessary capacitance or the proper resistance through the device. The insulator thickness can desirably range from 5000 angstroms to 250 angstroms. A device configuration is obtained using electron beam etching, which provides increased packing density and ultra-small devices with a high degree of controllability.

It has been established previously that electron beam etching has resolution at and below 1000 angstroms, i.e., patterns in the form of channels can be formed in an electronresist layer. For a metal stripe on a substrate covered with electronresist in Fig. 1, an electron beam is swept across the stripe producing the pattern in Fig. 2. The electron beam-exposed resist is stripped away producing Fig. 3. The channel may now be extended into the metal film by a variety of techniques, such as chemical or sputter etching, producing the configuration of Fig. 4. The resist can be stripped away producing a stripe with a channel in it as in Fig. 5. The channel can then be filled by depositing material, such as oxides or semicond...