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Browse Prior Art Database

Preparation of Garnet Single Crystal Surfaces for Epitaxy

IP.com Disclosure Number: IPCOM000077205D
Original Publication Date: 1972-Jun-01
Included in the Prior Art Database: 2005-Feb-25
Document File: 2 page(s) / 23K

Publishing Venue

IBM

Related People

Sadagopan, V: AUTHOR

Abstract

A processing step is described to realize large defect-free areas of garnet single-crystal surfaces for epitaxy and low-coercive force in such epitaxial films.

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Preparation of Garnet Single Crystal Surfaces for Epitaxy

A processing step is described to realize large defect-free areas of garnet single-crystal surfaces for epitaxy and low-coercive force in such epitaxial films.

In the article appearing in the IBM Technical Disclosure Bulletin, Vol. 15 No. 1, pages 280 and 281, there is outlined a processing method to obtain garnet substrate surfaces with low-defect densities. Epitaxial films on such specially prepared surfaces exhibited a high degree of perfection.

Another processing technique is described herein utilizing both chemical and mechanochemical polishing procedures. A typical processing sequence consists of the following steps:

(1) Successive polishing of sliced wafer with 30, 9 and 3 micron diamond grits as discussed in the noted article of pages 280 and 281 hereof. Both diamond polished sides are treated with SYTON* to remove 0.5 to 1.0 mil/side. (2) Chemical polishing with 1:1 H(2)SO(4):H(3)PO(4) in the range of 200-250 degrees C. The polishing rates at these temperatures are presented in the figure. (3) Repolishing with SYTON to remove approximately 0.5-1.0 mil/ side; under optimum conditions, SYTON polishes at the rate of 0.3 mil/hour. (4) Annealing of the above double-SYTON-polished wafers in the range of 1200 degrees C for four hours.

The surfaces thus prepared have extensive areas free from defects. * Trademark of Monsanto Company.

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