Browse Prior Art Database

Formation of Integrated Arrays having Active Devices and LED's

IP.com Disclosure Number: IPCOM000077297D
Original Publication Date: 1972-Jul-01
Included in the Prior Art Database: 2005-Feb-25
Document File: 2 page(s) / 52K

Publishing Venue

IBM

Related People

Blum, JM: AUTHOR [+2]

Abstract

A method is shown for forming both light-emitting diodes (LED's) and active devices (transistors) on the same substrate, using liquid phase epitaxy (LPE). This process uses a substrate which has already been prepared for high-efficiency light transmission, and is then used to fabricate bipolar transistors.

This text was extracted from a PDF file.
At least one non-text object (such as an image or picture) has been suppressed.
This is the abbreviated version, containing approximately 64% of the total text.

Page 1 of 2

Formation of Integrated Arrays having Active Devices and LED's

A method is shown for forming both light-emitting diodes (LED's) and active devices (transistors) on the same substrate, using liquid phase epitaxy (LPE). This process uses a substrate which has already been prepared for high- efficiency light transmission, and is then used to fabricate bipolar transistors.

In Fig. 1, pn junction LED's are provided by first growing a p-type layer 10 on an appropriate substrate 8. An n-type layer 12 is then grown by LPE on layer 10. After this, isolation diffusions 14 are provided through layer 12 to form the side wall of the LED's, which have junctions partly formed by growth processes and partly formed by diffusion.

Fig. 2 shows the completed array having both active devices (devices 1-3) and LED's therein. The active devices can be formed by one of two techniques.

The first technique is illustrated in Figs. 3A-3C. This is the technique used to make device 1 of Fig. 2. In Fig. 3A, the basic structure of Fig. 1 is shown. Shallow diffused p-type regions 16 are provided in n-type layer 12 by planar diffusion through mask 18 (Al(2)O(3)). P-type region 16 is an active base region of the transistor. Mask 18 is then removed and another mask 20 is provided for LPE growth of an n-type emitter 22 (Fig. 3C). Contacts are then provided to emitter 22 and to the base 16 (Fig. 2).

The second technique is used to make device 2 of Fig. 2. This technique employs melt-back during the L...