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Al(x)Ga(1-x)As Device Arrays

IP.com Disclosure Number: IPCOM000077298D
Original Publication Date: 1972-Jul-01
Included in the Prior Art Database: 2005-Feb-25
Document File: 2 page(s) / 46K

Publishing Venue

IBM

Related People

Blum, JM: AUTHOR [+2]

Abstract

Transistor and diode arrays are easily fabricated using Al(x)Ga(1-x)As liquid phase epitaxy (LPE) grown layers. Adjacent p-type and n-type layers of this material can be formed having a total thickness only 6-8 microns. Due to these thin layers, active devices can easily be made using mesa etching.

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Al(x)Ga(1-x)As Device Arrays

Transistor and diode arrays are easily fabricated using Al(x)Ga(1-x)As liquid phase epitaxy (LPE) grown layers. Adjacent p-type and n-type layers of this material can be formed having a total thickness only 6-8 microns. Due to these thin layers, active devices can easily be made using mesa etching.

Figs. 1A and 1B show steps for making PN junction field-effect transistor arrays. In Fig. 1A, epitaxial Al(x)Ga(1-x)As p and n layers are grown on a semi- insulating GaAs substrate. An oxide mask is then deposited and etched to enable p-type diffusions into the n-type Al(x)Ga(1-x)As layer. These diffusions are about 1-2 microns deep.

In Fig. 1B, mesa etching through the LPE layers is provided for isolation, and metallic alloy contacts are provided.

Figs. 2A and 2B show further techniques for making combined arrays using LPE grown Al(x)Ga(1-x)As layers. In this case, mesa etching is not used. In Fig. 2A, an n-type Al(x)Ga(1-x)As layer is grown on an n-type or semi-insulating GaAs substrate. P-type diffusions are then made through an oxide mask, as shown in Fig. 2A.

As shown in Fig. 2B, another epitaxial Al(x)Ga(1-x)As n-type layer about 3-5 microns thick is grown and both shallow and deep p-type diffusions are made through oxide masks. Metallic alloys are deposited for electrical contact and an array is provided containing pn junction diodes, pnp transistors, and junction field-effect transistors on the same wafer.

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