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Integrated Multicolor Light Emitting Diode Array

IP.com Disclosure Number: IPCOM000077299D
Original Publication Date: 1972-Jul-01
Included in the Prior Art Database: 2005-Feb-25
Document File: 2 page(s) / 38K

Publishing Venue

IBM

Related People

Blum, JM: AUTHOR [+2]

Abstract

Integrated diode arrays are provided which will emit green and red light simultaneously (Fig. 1) or separately (Fig. 2).

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Integrated Multicolor Light Emitting Diode Array

Integrated diode arrays are provided which will emit green and red light simultaneously (Fig. 1) or separately (Fig. 2).

Al(x)Ga(1-x)As pn junctions are used to provide red light-emitting diodes. GaP pn junctions are used to provide green light-emitting diodes.

In Fig. 1, a GaP pn junction is grown on a GaP substrate using liquid phase epitaxy. An oxide mask is then deposited on the grown GaP layer and is etched to provide openings in which zinc is diffused to form p-type isolation regions 10. Another oxide layer 12 is then deposited and holes are etched in it to expose the subsequent light-emitting areas. After this, Al(x)Ga(1-x)As p and n type layers 14, 16 are grown by liquid phase epitaxy in these holes to form pnpn arrays (Fig.
1). This structure will provide diodes which emit both green and red light simultaneously.

To provide diode arrays which will emit either red or green light, the structure of Fig. 2 is used. In this structure, a shallow p-type region 18 is provided in the uppermost GaP layer before the Al(x)Ga(1-x)As layers 14, 16 are grown. P-type regions 18 provide contact areas for the Al(x)Ga(1-x)As diodes.

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