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Low Temperature Annealing in Ion Implanted Silicon

IP.com Disclosure Number: IPCOM000077303D
Original Publication Date: 1972-Jul-01
Included in the Prior Art Database: 2005-Feb-25
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Crowder, BL: AUTHOR [+3]

Abstract

Boron is known as an ion which can be successfully implanted in silicon. Under normal implantation conditions, an amorphous layer is not produced in the silicon due to ion implantation of the silicon. This means that a high-temperature annealing step is required which significantly diminishes the number of electrically active boron ions.

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Low Temperature Annealing in Ion Implanted Silicon

Boron is known as an ion which can be successfully implanted in silicon. Under normal implantation conditions, an amorphous layer is not produced in the silicon due to ion implantation of the silicon. This means that a high-temperature annealing step is required which significantly diminishes the number of electrically active boron ions.

In order to be able to obtain low-temperature annealing which will leave implanted ions electrically active, it is proposed to increase the dose rate of ion implantation to a rate greater than one microampere/cm/2/ for samples at 0 degrees C. This provides a continuous amorphous layer of silicon which can be annealed by low temperatures (550 degrees C).

This technique has advantages over the use of a "predamage step" using implantation of an inert species. It is also more simple than using low temperature implantation.

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