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High Temperature Pyrolytic Deposition Process

IP.com Disclosure Number: IPCOM000077435D
Original Publication Date: 1972-Jul-01
Included in the Prior Art Database: 2005-Feb-25
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Bratter, RL: AUTHOR [+2]

Abstract

In this process, SiO(2) is pyrolytically deposited at high temperatures utilizing the carrier gas, silane, and CO(2).

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High Temperature Pyrolytic Deposition Process

In this process, SiO(2) is pyrolytically deposited at high temperatures utilizing the carrier gas, silane, and CO(2).

Normally, pyrolytic oxide is grown at temperatures on the order of 700 degrees C using SiH(4). Oxide grown under such conditions has a relatively high-etch rate, as compared to a thermal oxide. This leads to undercutting. The relatively low temperature of deposition is necessary, in order to prevent deposition on the interior of the reactor and wafer supports.

In this process silane and CO(2), at an approximate volume ratio of 1 to 10, are introduced into the reactor chamber in a carrier gas, preferably hydrogen. The temperature of the substrate is maintained on the order of 1000 degrees C. The use of CO(2) in combination with silane permits deposition at higher temperatures, and also avoids HCl as a by-product common to silicon tetrachloride deposition processes.

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