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Kerf Oxide Trench for Laser Dicing

IP.com Disclosure Number: IPCOM000077443D
Original Publication Date: 1972-Jul-01
Included in the Prior Art Database: 2005-Feb-25
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Bkaer, T: AUTHOR [+5]

Abstract

Quartz or SiO(2) passivation layers over integrated circuit silicon wafers are substantially transparent to sources of laser energy and will not readily vaporize during laser dicing. The underneath silicon material vaporizes and explodes with great pressure, thus delaminating and damaging large areas of the quartz layer or passivation material. In order to prevent this problem, two narrow trenches are formed on both sides of the kerf region. The laser beam will still explode the quartz layer in the kerf area, but no stresses are transmitted to the passivation or quartz layer over the active semiconductor regions, and thus its integrity is maintained.

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Kerf Oxide Trench for Laser Dicing

Quartz or SiO(2) passivation layers over integrated circuit silicon wafers are substantially transparent to sources of laser energy and will not readily vaporize during laser dicing. The underneath silicon material vaporizes and explodes with great pressure, thus delaminating and damaging large areas of the quartz layer or passivation material. In order to prevent this problem, two narrow trenches are formed on both sides of the kerf region. The laser beam will still explode the quartz layer in the kerf area, but no stresses are transmitted to the passivation or quartz layer over the active semiconductor regions, and thus its integrity is maintained.

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