Browse Prior Art Database

MOSFET Load Gate Controlled Driver

IP.com Disclosure Number: IPCOM000077456D
Original Publication Date: 1972-Aug-01
Included in the Prior Art Database: 2005-Feb-25
Document File: 2 page(s) / 31K

Publishing Venue

IBM

Related People

Bello, SE: AUTHOR

Abstract

This is a metal-oxide semiconductor field-effect transistor (MOSFET) two-stage load gate controlled driver.

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MOSFET Load Gate Controlled Driver

This is a metal-oxide semiconductor field-effect transistor (MOSFET) two- stage load gate controlled driver.

Case 1 - Devices 1, 3 and 4 are enhancement mode devices, while 2 is a depletion mode device. Point A is connected to Point C. DC characteristics are that low voltage in (VI) allows voltage VB at point B to equal drain supply voltage VDS. When VB=VDS, voltage out (V0) can reach a level 1 threshold below VDS and a high VI allows VB to attain a low level, to turn 4 off. This allows V0 to reach 0, independent of relative sizes of 3 and 4. The only power dissipated in this state is used by 1 and 2. AC Characteristics: Since V0 (DC) is independent of sizes of 3 and 4, they can be large, improving speed.

Case 2 - Same, except A is connected to B, not C by phantom line P and line N is deleted. Operation is the same as Case 1.

Case 3 - 1 and 3 are enhancement mode, while 2 and 4 are depletion mode. A is connected to C. DC characteristics are basically the same, except V0 may reach VDS. Sizes of 3 and 4 are not independent. Power is dissipated in all devices. An AC characteristic is that control of VB allows larger devices 3 and 4, improving speed.

Case 4 - 1 and 3 are enhancement mode, while 2 and 4 are depletion mode. A is connected to B. Operation is the same as in Case 3.

The circuit is made from N channel or P channel devices. A low voltage refers to a voltage closer to zero in the absolute sense. The voltages are positive fo...