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Growth of Ternary Compounds

IP.com Disclosure Number: IPCOM000077499D
Original Publication Date: 1972-Aug-01
Included in the Prior Art Database: 2005-Feb-25
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Chicotka, RJ: AUTHOR [+2]

Abstract

Ternary compounds with a particular composition or with a continuous range of composition, including in situ synthesis of the seed crystal, which normally are not obtainable by chemical vapor deposition, are prepared by combining a vapor transport procedure and a solid-liquid-solid process.

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Growth of Ternary Compounds

Ternary compounds with a particular composition or with a continuous range of composition, including in situ synthesis of the seed crystal, which normally are not obtainable by chemical vapor deposition, are prepared by combining a vapor transport procedure and a solid-liquid-solid process.

The vapor transport procedure is used to produce the three-layer sandwich structure required for the subsequent solid-liquid-solid growth of the ternary semiconductor. By the chemical vapor deposition procedure a first GaP, an InP, and a final GaP layer are successively epitaxially deposited on a crystalline substrate. The various layers have an especially good metallurgical contact with each other and are essentially free from interface imperfections.

The sandwich structure obtained by the chemical vapor deposition procedure is heated to a given temperature which is above the melting point of the InP layer, but below that of the GaP layers and at which equilibrium of the ensemble is established. Then the temperature of one of the interfaces between the GaP layers and the InP liquid zone is lowered, so initiating the growth of the Ga(x)In(1-x)P layer. Conveniently, a temperature gradient is imposed on the sandwich structure ensemble, and the growth of the Ga(x)In(1-x)P layer continues until the GaP layer is consumed at the higher temperature, or the growth of the Ga(x)In(1-x)P layer is otherwise terminated.

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