Browse Prior Art Database

RF Sputtering of Metals and Dielectrics

IP.com Disclosure Number: IPCOM000077563D
Original Publication Date: 1972-Aug-01
Included in the Prior Art Database: 2005-Feb-25
Document File: 2 page(s) / 47K

Publishing Venue

IBM

Related People

Nuccio, C: AUTHOR

Abstract

The drawing schematically illustrates an improved radio-frequency (RF) sputtering apparatus. An RF voltage is applied to target electrodes 2 and 3 to produce sputtering of the material of the target electrodes, as ions in the evacuated chamber 4 collide with the targets. The material sputtered from the target is deposited on substrates 5 that are mounted on a cylindrical support 6, which is coaxial with the target.

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RF Sputtering of Metals and Dielectrics

The drawing schematically illustrates an improved radio-frequency (RF) sputtering apparatus. An RF voltage is applied to target electrodes 2 and 3 to produce sputtering of the material of the target electrodes, as ions in the evacuated chamber 4 collide with the targets. The material sputtered from the target is deposited on substrates 5 that are mounted on a cylindrical support 6, which is coaxial with the target.

A coil 7 (Helmholtz configuration) is located to produce a magnetic field that is coaxial with the electrodes and substrate holder 6. Target electrodes 2 and 3 are spherically shaped to produce an electrical field that is oblique to the magnetic field of coil 7. This arrangement tends to prevent electrons from striking substrates 5 and undesirably heating the substrate. Dashed line 8 shows a typical line of the electrical field that urges electrons toward the substrates. As the electrons cross the generally coaxial magnetic field, they are urged to spiral the electrode axis and heating of the substrates is thereby reduced.

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