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Epitaxial Garnet Films and Substrate Surface Roughness

IP.com Disclosure Number: IPCOM000077571D
Original Publication Date: 1972-Aug-01
Included in the Prior Art Database: 2005-Feb-25
Document File: 1 page(s) / 12K

Publishing Venue

IBM

Related People

Plaskett, TS: AUTHOR [+2]

Abstract

Confinement of epitaxial growth of garnet films on one side of a substrate is obtained by control of the roughness of the substrate surface.

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Epitaxial Garnet Films and Substrate Surface Roughness

Confinement of epitaxial growth of garnet films on one side of a substrate is obtained by control of the roughness of the substrate surface.

The properties of a magnetic film are considerably influenced by the substrate surface quality. Illustratively, the surface roughness of a substrate is known to affect the anisotropy field, magnetostriction, ferromagnetic resonance and saturation magnetization of magnetic films. Smooth, strain-free substrate surfaces are desirable for the growth of epitaxial garnet films for bubble domain devices. The garnet substrates are usually prepared to a smooth finish by a combination of mechanical and chemical polishing techniques. However, there is a disadvantage in preparing both sides of the substrate to a smooth finish, especially when the films are grown on such a substrate by liquid phase epitaxy. The substrate holder geometry in liquid phase epitaxy may permit access of the liquid to the backside of the substrate, so that film growth takes place on both sides of the substrate. Generally, the thickness and composition of the films on the opposite sides of the substrate are not the same. Any magnetic property measurement made on such films is subject to considerable uncertainty. Therefore, it is desirable to confine the growth of the garnet epitaxial film to only one side of the substrate.

Only one side of the substrate is polished to a smooth finish by the techniques descri...