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Interconnections for High Current Density Applications

IP.com Disclosure Number: IPCOM000077572D
Original Publication Date: 1972-Aug-01
Included in the Prior Art Database: 2005-Feb-25
Document File: 1 page(s) / 12K

Publishing Venue

IBM

Related People

Gambino, RJ: AUTHOR [+2]

Abstract

Metal interconnections for microcircuits have been found to undergo changes under high-current density conditions. It has been found that electromigration can produce dimensional changes and premature failure of the device.

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Interconnections for High Current Density Applications

Metal interconnections for microcircuits have been found to undergo changes under high-current density conditions. It has been found that electromigration can produce dimensional changes and premature failure of the device.

High-conductivity oxides, i.e., ReO(3) and tungsten bronze type oxides, are selected for interconnections in the microcircuits. Generally, oxides have smaller diffusion coefficients than metals in view of their ionic character. Certain oxides such as ReO(3) have relatively high-electrical conductivity. Some of the advantages of ReO(3) and related compounds as conductors in microcircuits are:

(1) High conductivity (sigma) of ReO(3) (6.7 x 10/-6/ ohm-cm) and its free electron concentration/mole value of unity. Rb(0.32) WO(3) has a sigma value of
6.3 x 10/-5/ ohm-cm.

(2) The ease with which conductivity can be varied as a function of composition: Illustratively, blue K(0.28)MoO(3) is metallic at room temperature, whereas the red K(0.33)MoO(3) is a semiconductor. Therefore, selective area ion implantation could provide coexisting areas of semiconductor and metal. Further, the differences in electronic properties of K(0.28) MoO(3) and K(0.33)MoO(3) should have accompanying differences in etchability that would be relevant for further processing.

(3) Some of the tungsten bronzes, such as the blue K(0.28) MoO(3) temperatures into a semiconductor.

(4) ReO(3) and other related conventional compound...