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Integrated Light Emitting PNPN and NPN Devices

IP.com Disclosure Number: IPCOM000077580D
Original Publication Date: 1972-Aug-01
Included in the Prior Art Database: 2005-Feb-25
Document File: 2 page(s) / 32K

Publishing Venue

IBM

Related People

Blum, JM: AUTHOR [+2]

Abstract

Figs. 1A-1C illustrate the method by which npn and pnpn structures are made using both diffusion and liquid phase epitaxy (LPE). In Fig. 1A, an n-type substrate 10 is comprised of GaAs(y)P(1-y). P-type regions 12 are diffused into the top surface of the substrate, through openings in oxide mask 14. P-type regions 12 are conveniently formed by diffusion of zinc. This forms a pn light-emitting diode array.

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Integrated Light Emitting PNPN and NPN Devices

Figs. 1A-1C illustrate the method by which npn and pnpn structures are made using both diffusion and liquid phase epitaxy (LPE). In Fig. 1A, an n-type substrate 10 is comprised of GaAs(y)P(1-y). P-type regions 12 are diffused into the top surface of the substrate, through openings in oxide mask 14. P-type regions 12 are conveniently formed by diffusion of zinc. This forms a pn light- emitting diode array.

After this, another oxide film 16 is deposited on the top surface of substrate 10 and windows are provided therein to expose p-type regions 12. N-type layers 18 of Al(x)Ga(1-x)As(1)P(1-y) are then grown through the openings in oxide 16. This forms an npn structure, as indicated in Fig. 1B.

In Fig. 1C, a pnpn structure is provided by growing additional layers 20 of p- type Al(x)Ga(1-x)As(y)P(1-y) by liquid phase epitaxy on n-type layers 18.

This same technique can be used to provide active devices, such as bipolar or field-effect transistor (FET) devices, in III-V semiconductors and alloys. For instance, n-type layers 18 will comprise the emitters or gates of such devices. Thus, n-type regions can be prepared in a planar monolithic environment. For instance, an n-type substrate of a III-V semiconductor such as GaAs can have shallow p-type regions diffused into one surface of the substrate. If a second masking layer is used and a small opening etched into it to expose the diffused p-type region, an emitter of GaAs can...