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Surface Analysis of Silicon Wafer by Attenuated Total Reflectance

IP.com Disclosure Number: IPCOM000077664D
Original Publication Date: 1972-Sep-01
Included in the Prior Art Database: 2005-Feb-25
Document File: 2 page(s) / 39K

Publishing Venue

IBM

Related People

Needham, CD: AUTHOR

Abstract

The device, as shown in Fig. 1, is fabricated from a block of monocrystalline silicon, and acts as an internal reflectance element (IRE) in apparatus designed to couple infrared radiation into a silicon wafer for spectrophotometric examination. In operation, the back side of the wafer is placed in optical contact with the IRE unit and is positioned over the area to be analyzed.

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Surface Analysis of Silicon Wafer by Attenuated Total Reflectance

The device, as shown in Fig. 1, is fabricated from a block of monocrystalline silicon, and acts as an internal reflectance element (IRE) in apparatus designed to couple infrared radiation into a silicon wafer for spectrophotometric examination. In operation, the back side of the wafer is placed in optical contact with the IRE unit and is positioned over the area to be analyzed.

In Fig. 2 is shown the entire apparatus incorporating the IRE device. The apparatus is a sampling accessory for a commercial IR spectrometer. Provision is made for polarizing and focusing the radiation on the IRS, as well as for refocusing the emerging radiation back into the spectrometer. Spectral radiation in the range of 2.5 to 8 micrometers can be used.

Use of the equipment allows the examination of surface changes which may have occurred in the oxide coating during processing steps, in the conversion of the wafer to an electronic device. Other uses include the examination of the polymer (i.e. photoresist) to SiO(2) interface and the chemical effects of adhesion promoters. The technique also offers a means to study radiation induced changes in the resist film.

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