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Rapid Determination of Photomask Pattern Area

IP.com Disclosure Number: IPCOM000077665D
Original Publication Date: 1972-Sep-01
Included in the Prior Art Database: 2005-Feb-25
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Schwartz, GC: AUTHOR

Abstract

This method is based on the fact that during constant-current formation of barrier layer on aluminum, the rate of voltage rise is proportional to the current density. The method comprises the following steps:

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Rapid Determination of Photomask Pattern Area

This method is based on the fact that during constant-current formation of barrier layer on aluminum, the rate of voltage rise is proportional to the current density. The method comprises the following steps:

1) Determine the rate of voltage rise for a given current density during a barrier layer formation on aluminum film.

2) Determine the mask pattern using conventional photolithographic techniques. The exposed aluminum area is approximated so that the current density on which voltage rise was measured in Step 1 above can be approximated in Step 3 below, because the rate of voltage rise increases by about a factor of eleven for a tenfold increase in current density.

3) Form barrier layer in the same electrolyte utilized in Step 1, by applying the appropriate current. The rate of voltage rise is measured; from this value, the actual current density is calculated and the area being anodized computed.

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