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Reducing Resistance in PN Junctions Using (1-x)P(x)GaAs

IP.com Disclosure Number: IPCOM000077771D
Original Publication Date: 1972-Sep-01
Included in the Prior Art Database: 2005-Feb-25
Document File: 2 page(s) / 21K

Publishing Venue

IBM

Related People

Blakeslee, AE: AUTHOR [+2]

Abstract

In the making of certain light-emitting diodes, GaAs(1-x)P(x) is grown epitaxially on a substrate of GaAs. The value of x can vary from 0 to 0.38, and the GaAsP material has to be graded to the proper composition and then a certain amount of constant composition has to be grown. The total epitaxially grown thickness is of the order of 70 Mu or thicker.

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Reducing Resistance in PN Junctions Using (1-x)P(x)GaAs

In the making of certain light-emitting diodes, GaAs(1-x)P(x) is grown epitaxially on a substrate of GaAs. The value of x can vary from 0 to 0.38, and the GaAsP material has to be graded to the proper composition and then a certain amount of constant composition has to be grown. The total epitaxially grown thickness is of the order of 70 Mu or thicker.

In the epitaxial growth of the GaAs(1-x)P(x) layer, the concentration of vapor dopant, i.e., H(2)S, was maintained high (about 10/8/ cm/-3/ throughout the first 60 Mu of the GaAs(1-x)P(x) layer where the diffused junction layer of a subsequently built light-emitting diode is created. In effect, the maintenance of a relatively high-vapor dopant level for most of the thickness of the GaAs(1-x)P(x) layer results in a reduced diode resistance (hence increased light output), yet a reduced dopant level for only the last 10 Mu is not such as to interfere with the making of an efficient PN luminescent junction.

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