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Postdeposition Polishing of ZnO and A1N Films

IP.com Disclosure Number: IPCOM000077835D
Original Publication Date: 1972-Sep-01
Included in the Prior Art Database: 2005-Feb-25
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Brady, MJ: AUTHOR [+3]

Abstract

A postdeposition polishing procedure is disclosed for improving the surface perfection of thin films of ZnO and AlN, for acousto-optic device applications.

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Postdeposition Polishing of ZnO and A1N Films

A postdeposition polishing procedure is disclosed for improving the surface perfection of thin films of ZnO and AlN, for acousto-optic device applications.

The procedure consists of polishing ZnO and AlN films in a colloidal suspension of an abrasive, such as SiO(2), ZrO(2) or ZrSiO(4) in an alkaline medium on nonwoven, porous cloths for periods ranging from a few to several minutes. The rate of ZnO stock removal under the polishing conditions used - 4 lb. load on a one-inch wafer at wheel speeds of 30 RPM -is approximately 6 microns/hour. The polished surfaces were flat and did not have cloudy appearance. The polished surfaces exhibited a high degree of structural perfection by electron diffraction examination. The superior quality of the polished surfaces has been established from the following two factors:

1) Acoustic insertion losses in both ZnO and AlN via surface scattering was approximately 50 db, in contrast to approximately 110 db in the unpolished state of the same sample.

2) Optical coupling of the surface wave to the polished surface has been successfully accomplished in ZnO, whereas optical coupling could not be realized in the as-deposited, unpolished state.

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