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Wafer Holder for Electrodeposition of Contact Metallurgy

IP.com Disclosure Number: IPCOM000077862D
Original Publication Date: 1972-Oct-01
Included in the Prior Art Database: 2005-Feb-25
Document File: 2 page(s) / 46K

Publishing Venue

IBM

Related People

Sulich, M: AUTHOR

Abstract

A wafer holder 10 comprises a closed cylindrical metallic box 11 inserted within a nonmetallic cup 12. Semiconductor wafers 13 are held against and in electrical contact with the raised platforms 14 of metal plate 15, by a vacuum applied to the chamber 16 of metal box 11 through plastic covered metal tube 17 connected to a suitable pump. Platforms 14 not covered by wafers 13 are covered by nonmetallic caps 15, to close the orifices 19 and to insulate platforms 14 from contact with an electrolyte during electrodeposition. Cup 12 has a side wall which extends above metal plate 15 to provide a well beneath the wafers 13.

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Wafer Holder for Electrodeposition of Contact Metallurgy

A wafer holder 10 comprises a closed cylindrical metallic box 11 inserted within a nonmetallic cup 12. Semiconductor wafers 13 are held against and in electrical contact with the raised platforms 14 of metal plate 15, by a vacuum applied to the chamber 16 of metal box 11 through plastic covered metal tube 17 connected to a suitable pump. Platforms 14 not covered by wafers 13 are covered by nonmetallic caps 15, to close the orifices 19 and to insulate platforms 14 from contact with an electrolyte during electrodeposition. Cup 12 has a side wall which extends above metal plate 15 to provide a well beneath the wafers 13.

The well is flooded with a solidifiable dielectric solution up to and stopping at the edges of the wafers 13. The solution covers all metal surfaces and upon solidification forms a film 20, which insulates the metal plate 15 and the overhanging bottom surfaces of the wafers 13. After solidification of film 20, the wafer holder with wafers 13 held thereon is submerged in an electrolyte, and after proper electrical connection to metal box 11 via tube 17, metal is deposited on the upper exposed surfaces of wafers 13. Following the electrodeposition process, the dielectric film 20 may be dissolved by a suitable solvent to release the wafers 13 for further processing.

A particular solution for forming the dielectric film 20 comprises a solution of 5% PARLODION in ethyl acetate. PARLODION is a regis...