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Browse Prior Art Database

Control of Uniaxial Anisotropy in Magnetic Material for Use in Bubble Domain Memory

IP.com Disclosure Number: IPCOM000077951D
Original Publication Date: 1972-Oct-01
Included in the Prior Art Database: 2005-Feb-25
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Doo, VY: AUTHOR

Abstract

Depositing permalloy directly on a magnetic garnet, such as presently done to fabricate T and I bars for use in magnetic bubble domain devices, often causes interfacial stress which can adversely affect the uniaxial anisotropy of the garnet.

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Control of Uniaxial Anisotropy in Magnetic Material for Use in Bubble Domain Memory

Depositing permalloy directly on a magnetic garnet, such as presently done to fabricate T and I bars for use in magnetic bubble domain devices, often causes interfacial stress which can adversely affect the uniaxial anisotropy of the garnet.

Accordingly, a technique for minimizing interfacial stress in such devices is to provide an insulating layer between the garnet and the permalloy which has a suitable thermal expansion coefficient depending upon: (1) the thickness ratio between the garnet and the insulating film, (2) the insulating film deposition rate, and (3) the temperature.

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