Dismiss
InnovationQ will be updated on Sunday, Oct. 22, from 10am ET - noon. You may experience brief service interruptions during that time.
Browse Prior Art Database

Fabricating Magnetoresistive Sensing Elements in Magnetic Bubble Domain Devices

IP.com Disclosure Number: IPCOM000077952D
Original Publication Date: 1972-Oct-01
Included in the Prior Art Database: 2005-Feb-25
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Doo, VY: AUTHOR

Abstract

Basically, most known fabrication steps in providing magnetoresistive sensing elements in magnetic bubble domain devices, include deposition of an insulating material between the magnetic garnet material and the sensing element. The magnetic field of the bubble to be sensed is weakened in going through the insulating film to the sensor. Accordingly, a fabrication process is suggested which eliminates such insulating films as follows:

This text was extracted from a PDF file.
This is the abbreviated version, containing approximately 100% of the total text.

Page 1 of 1

Fabricating Magnetoresistive Sensing Elements in Magnetic Bubble Domain Devices

Basically, most known fabrication steps in providing magnetoresistive sensing elements in magnetic bubble domain devices, include deposition of an insulating material between the magnetic garnet material and the sensing element. The magnetic field of the bubble to be sensed is weakened in going through the insulating film to the sensor. Accordingly, a fabrication process is suggested which eliminates such insulating films as follows:

1) Deposit a thin layer of permalloy on a magnetic garnet epitaxial layer and thereafter apply photoresist, develop and subtract etch to form sensors.

2) Deposit a layer of high-conductivity metal, and thereafter apply photoresist and develop to form window patterns such as T and I bar.

3) Deposit a permalloy layer into the window patterns.

4) Apply photoresist and develop, followed by subtract etch to form electric circuit paths of the high-conductivity metal.

It should be noted that the interaction between the magnetic bubble and the permalloy deposited in step 3 is diluted, due to the presence of the high- conductivity metal therebetween.

1