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Removing Photoresist After Sputter Etching

IP.com Disclosure Number: IPCOM000077958D
Original Publication Date: 1972-Oct-01
Included in the Prior Art Database: 2005-Feb-25
Document File: 1 page(s) / 12K

Publishing Venue

IBM

Related People

Johnson, D: AUTHOR

Abstract

This procedure produces the removal of photoresist from sputter etched samples without attacking or destroying the metallic layers, such as permalloy. Sputter etching causes the polymerization of photoresist which makes it difficult to remove.

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Removing Photoresist After Sputter Etching

This procedure produces the removal of photoresist from sputter etched samples without attacking or destroying the metallic layers, such as permalloy. Sputter etching causes the polymerization of photoresist which makes it difficult to remove.

With KERN DECONTAM* solution, photoresist can be removed from sputter etched samples with no visible damage to the metal (NiFe) films and with no change of magnetic properties of permalloy films as thin as 200 Angstroms. Procedure 1.

A group of samples coated with Shipley AZ-1350H** or Ag-111** were sputter etched. These samples were then put in a KERN DECONTAM solution for a period of time and rinsed off with DI H(2)O. Inspection of these samples showed that all photoresist residue was removed with no visible damage to the metal films. Procedure 2.

A solution of 40% KERN DECONTAM plus 60% acetone heated to 40 degrees was used in an ultrasonic cleaner. All photoresist was removed in a very short period of time without attacking the metal film.

A series of tests has shown that with the use of a KERN DECONTAM plus xylene solution or KERN DECONTAM plus acetone solution the KTFR*** and Shipley photoresists can be removed, respectively, from as thin permalloy films.as 200 Angstroms, without any damage to the metallic thin film surfaces on process wafers after exposure to ion bombardments during sputter etching. The solutions used were: a) 80% KERN DECONTAM/20% xylene (for KTFR) b) 60% K...