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Anodic Oxide Nitride Films

IP.com Disclosure Number: IPCOM000077961D
Original Publication Date: 1972-Oct-01
Included in the Prior Art Database: 2005-Feb-25
Document File: 1 page(s) / 13K

Publishing Venue

IBM

Related People

Laibowitz, RB: AUTHOR [+2]

Abstract

This procedure involves (a) the method of formation of oxide-nitride films, (b) the use of NH(4)OH in the electrolyte to give oxide-nitride films, (c) the oxide-nitride films, which have different properties than oxide films, (d) niobium oxide-nitride films, and (e) tantalum oxide-nitride films. The oxide-nitride films can be useful as insulating materials, rectifying diodes, tunneling junctions, Josephson tunneling junctions, memory and switching elements, and may also be used as decorative and protective coatings.

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Anodic Oxide Nitride Films

This procedure involves (a) the method of formation of oxide-nitride films, (b) the use of NH(4)OH in the electrolyte to give oxide-nitride films, (c) the oxide- nitride films, which have different properties than oxide films, (d) niobium oxide- nitride films, and (e) tantalum oxide-nitride films. The oxide-nitride films can be useful as insulating materials, rectifying diodes, tunneling junctions, Josephson tunneling junctions, memory and switching elements, and may also be used as decorative and protective coatings.

The usual anodic process takes place in an electrolytic cell consisting of a metallic anode, a suitable cathode, and an electrolyte having oxygen containing ions. When current is passed through the cell, a metallic oxide- layer is formed at the anode. Anodic oxide films can be used as insulating or semiconducting films and in active devices. The properties of the oxide film depend on the metal that is used as anode, and in order to modify the properties of the oxide, the metal anode must be altered.

A method is presented for introducing nitrogen ions into the anodic film. In the resultant metal oxide-nitride film, the nitrogen significantly modifies the film properties and helps to stabilize the film.

It has been observed that the anodized oxide-nitride films have properties which are more advantageous and desirable than anodized oxide films. Specifically, anodized niobium oxide-nitride has been found to be more temperature stable than anodized niobium oxide. The temperature stability was measured by observing changes in electrical properties, such as resistance and die...