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Browse Prior Art Database

Multiusage of Sputter and Sputter Etch

IP.com Disclosure Number: IPCOM000078015D
Original Publication Date: 1972-Oct-01
Included in the Prior Art Database: 2005-Feb-25
Document File: 2 page(s) / 30K

Publishing Venue

IBM

Related People

Budo, Y: AUTHOR [+4]

Abstract

This symmetrically opposite cathode and anode design permits sputtering floating mode, driven mode, and/or sputter etching with the same machine.

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Multiusage of Sputter and Sputter Etch

This symmetrically opposite cathode and anode design permits sputtering floating mode, driven mode, and/or sputter etching with the same machine.

RF generator 1 supplies power to electrodes 2 and 3 which are contained in vacuum chamber 4. The symmetrically opposite electrodes 2 and 3 are impedance matched by networks 5 and 6. A power ratio variable capacitor 7 is placed between the two electrodes, so that the power level may be adjusted on each electrode independent of the other. With this arrangement, either electrode may be changed from cathode to anode or vice versa. Switch 8 is disconnected and switch 9 is connected when sputter etching is desired. Also foil 10 is added to the target when sputter etching is being performed. This flexibility allows an operator to sputter deposit with one run, change power ratio, and sputter etch in the next run with the same machine.

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