Browse Prior Art Database

Selective RF Sputter Etch

IP.com Disclosure Number: IPCOM000078049D
Original Publication Date: 1972-Nov-01
Included in the Prior Art Database: 2005-Feb-25
Document File: 2 page(s) / 73K

Publishing Venue

IBM

Related People

Lechaton, JS: AUTHOR [+4]

Abstract

This is an apparatus for radio-frequency (RF) sputter cleaning wafers in an evaporation system prior to metal deposition. A separate RF sputter cleaning process done in separate RF sputter etching system is eliminated, and the processing cycle time is substantially reduced. Unlike direct current (DC) sputter cleaning, the wafer surface in this system can be either conducting or insulating and the area is unlimited.

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Selective RF Sputter Etch

This is an apparatus for radio-frequency (RF) sputter cleaning wafers in an evaporation system prior to metal deposition. A separate RF sputter cleaning process done in separate RF sputter etching system is eliminated, and the processing cycle time is substantially reduced. Unlike direct current (DC) sputter cleaning, the wafer surface in this system can be either conducting or insulating and the area is unlimited.

The upper part of the figure shows the schematic drawing of the whole set up which basically includes the chamber 1, the rotary drive shaft 2, the wafer heaters 3, the shielded domes 4, 5, 6, a RF power feedthrough 8, which includes a spring loaded point contact 8-1, and grounding tape 8-2 to the dome through a cam 7, which is shown in more detail in the lower part of the figure. The cam 7 is operated using its rotary shaft 7-1, pulling rod 7-2, metal surface 7-3, and ceramic insulator 7-4. The cam has high-voltage contact 5-1 and ground contact 6-1, and will disengage the domes automatically when the domes are rotating during the metal evaporation and deposition step. The center dome 5 is the wafer dome. Both the top 4 and the bottom 6 domes are used for shielding, so that the power needed is reduced to a minimum. The openings on the bottom dome are used for sputter etching selective areas and corresponding openings on the top dome are necessary for heating up the wafers.

For best uniformity in etching on the wafers, (1) the...