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Complimentary MOS Transistors

IP.com Disclosure Number: IPCOM000078066D
Original Publication Date: 1972-Nov-01
Included in the Prior Art Database: 2005-Feb-25
Document File: 2 page(s) / 115K

Publishing Venue

IBM

Related People

Magdo, IE: AUTHOR [+2]

Abstract

This method of fabricating complimentary transistors uses recessed oxidation and selective epitaxial deposition techniques. In this method, as shown in Fig. 1, a blanket layer 10 of Si(3) N(4) is deposited on substrate 12 embodying a background dopant. Using known photolithographic etching techniques, an annular opening 14 is made surrounding a pocket 15 of substrate 12. A relatively larger opening 16 of a size to encompass the ultimate dielectric isolation, as well as the device body is made. Channel 18 and recess 19 are made by etching body 12 using layer 10 as a masking layer. Exposure of the wafer to an oxidizing environment causes the formation of an annular SiO(2) dielectric region 20 and a SiO(2) dielectric body 21. Later 10 is removed and the substrate 12 reoxidized.

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Complimentary MOS Transistors

This method of fabricating complimentary transistors uses recessed oxidation and selective epitaxial deposition techniques. In this method, as shown in Fig. 1, a blanket layer 10 of Si(3) N(4) is deposited on substrate 12 embodying a background dopant. Using known photolithographic etching techniques, an annular opening 14 is made surrounding a pocket 15 of substrate 12. A relatively larger opening 16 of a size to encompass the ultimate dielectric isolation, as well as the device body is made. Channel 18 and recess 19 are made by etching body 12 using layer 10 as a masking layer. Exposure of the wafer to an oxidizing environment causes the formation of an annular SiO(2) dielectric region 20 and a SiO(2) dielectric body 21. Later 10 is removed and the substrate 12 reoxidized.

As shown in Fig. 3, a layer of photoresist 22 is deposited on the surface of the substrate. An opening 23 is formed on layer 22, using conventional photolithographic techniques. The central portion of recessed SiO(2) body 21 is removed by etching. After removal of the layer 22 diffused region 24 can be made through the opening, if desired.

As shown in Fig. 4, selective epitaxial deposition techniques are used to fill in the opening made in dielectric body 21 to result in the single-crystal silicon area 26, which is doped with an impurity opposite to that of the substrate 12. The surface of the pocket 26 is then reoxodized and diffusion windows are made over pocke...